 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| Preliminary 03.05.08 P0531981H Features * * * * * * * 1.9 GHz frequency band Typical 36 dBm output power Low power consumption 18 W typ. Excellent adjacent leakage power Typical 35 dB power gain Cost-effective metal package Low thermal resistance structure 1.9 GHz band Power Amplifier Module Applications * Final stage power amplifier of base station for PHS Description The P0531981H is a high performance 1.9 GHz band power amplifier module capable of 36 dBm output power with a typical 35 dB gain at 1.9 GHz band, housed in a cost effective metal package. This device features a low power consumption owing to the excellent linearity and high gain of the pulse-doped GaAs MESFET developed by SEI, dissipating 1500 mA typical. It operates from +12 V and -4.9 V power supplies. Power Amplifier Module Absolute Maximum Ratings P0531981H Case Temperature Tc=25 C Parameter DC Supply Voltage Input Power Storage Temperature Operating Case Temperature Symbol Vd1, Vd2 Vg1, Vg2 Pin Tstg Topt Value 14 * -7 10 -40 to + 95 -25 to + 80 Units V V dBm C C Notes: Operating of this device above any one of these parameters may cause permanent damage. *Vg1,Vg2=-4.9V Electrical Specifications Case Temperature Tc=25 C Value Parameter Frequency Supply Current (under operation) Gate Current Power Gain Input VSWR Harmonic Distortion 3f0 Padj1 Adjacent Channel Leakage Power Padj2 900 kHz offset -- -74 -72 dBc 600 kHz offset -- -- -45 -70 -35 -67 dBc dBc Symbol f Id Ig Ga in 2f0 Pout=36.0 dBm Vd1=12 V Vd2=12 V Vg1=-4.9 V Vg2=-4.9 V Test Conditions Min. 1880 -- -- 34 -- -- Typ. -- 1500 8 35 1.5 -45 Max. 1920 1650 15 -- 2.5 -35 MHz mA mA dB -- dBc Units Power Amplifier Module Package Drawings (Dimensions are mm) P0531981H 29.0 26.40.1 22.0 A 13.0 5.0 P0531981H 4-R1.2 2.0 9.0 SUMITOMO ELECTRIC 2.0 (1) (2) (3) (4) (5) (6) // 0.1 A 4.00.5 0.25 2.0 2.5 2.5 7.5 22.00.1 2.5 2.5 2.5 1.2 :Lot No. Dimensions are mm Pin Assignment (1) RFout (4) Vd1 (2) Vd2 (5) Vg1 (3) Vg2 (6) RFin Case: GND 2.4 Electron Device Department 1.8 Power Amplifier Module Power Characteristics Pout Gain Total Id RF P0531981H 38 f=1900MHz Vd=12V Vg=-4.9V 37 2000 1800 Pout (dBm) Gain (dB) 36 1600 35 1400 34 1200 33 -4 -3 -2 -1 Pin (dBm) 0 1 2 1000 Harmonic Distortion 2nd Harmonic Distortion 3rd Harmonic Distortion -40 -45 2nd Harmonic Distortion (dBc) 3rd Harmonic Distortion (dBc) f=1900MHz Vd=12V Vg=-4.9V -50 -55 -60 -65 -70 -75 -80 33 34 35 Pout (dBm) 36 37 38 Total Id RF (mA) Power Amplifier Module Adjacent Channel Leakage Power ACLR 600kHz Offset ACLR 900kHz Offset P0531981H -60 f=1900MHz Vd=12V Vg=-4.9V ACLR 600kHz Offset (dBc) ACLR 900kHz Offset (dBc) -65 -70 -75 -80 33 34 35 Pout (dBm) 36 37 38 Power Amplifier Module Evaluation Board Layout (Dimensions are mm) KP009J 44.2 P0531981H 42 C2 C2 C2 C2 C1 C1 C1 C1 RFout RFin Vd2 Vg2 Vd1 Vg1 RFout Vd2 RFin Vg2 Vd1 Vg1 RFout Vd2 C1 Vg2 C1 Vd1 C1 Vg1 C1 C2 C2 C2 C2 RFin DESIGNATION C1 C2 VALUE 1F 0.1F |
Price & Availability of P0531981H
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |